• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    The invention relates to a laser device (1) arranged in and / or on III-V heterostructure and silicon comprising ○ an III-V heterostructure amplifier medium (3), and ○ an edge optical waveguide (11). ), arranged facing the amplifying medium (3) and comprising a ribbon waveguide (15) having a longitudinal edge (17), the ridge optical waveguide (11) being disposed in silicon. The ridge optical waveguide (11) is oriented such that at least one Bragg grating (19, 19a, 19b) is disposed on the face (21) of the ribbon waveguide (15) which is proximal to the amplifying medium (3) and that the edge (17) is disposed on the face (23) of the ribbon waveguide (15) which is distal to the amplifying medium (3) .
    公开号:FR3025056A1
    申请号:FR1457937
    申请日:2014-08-22
    公开日:2016-02-26
    发明作者:Thomas Ferrotti；Bakir Badhise Ben；Alain Chantre；Sebastien Cremer；Helene Duprez
    申请人:Commissariat a lEnergie Atomique CEA；STMicroelectronics SA；STMicroelectronics Crolles 2 SAS；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD The present invention relates to the field of integrated photonic components that use both the properties of semiconductor materials capable of emitting light and those of semiconducting materials. conductors conventionally used in integrated circuits.
    [0002] More particularly, the present invention relates to a laser device and a method of manufacturing such a laser device. Such a laser device can be used to achieve optical links at high speeds, intrapuce links, intracards, free space. STATE OF THE PRIOR ART In the document "Hybrid silicon evanescent laser fabricated with a silicon wave guide and III-V offset quantum wells" Hyundai Park et al.
    [0003] 2909491 4 Optics Express, Vol. 13, No. 23, November 14, 2005, pages 9460-9464, there is described a laser source III-V material carried on an SOI substrate in which is formed a waveguide waveform ("RIB waveguide" in English) formed a waveguide ribbon ("slab waveguide" in English) surmounted by a ridge or rib ("rib" in English "). The coupling between the laser source and the waveguide is by evanescent wave. Mirrors bounding the cavity are made by sawing and polishing. The laser source and the waveguide are autonomous. The pumping of the amplifying cavity is optical. The disadvantage of this structure lies in the realization of the mirrors, it is necessary to make a step 3025056 2 called polisciage, polishing and sawing are simultaneous. Polishing is very difficult to achieve, it is a non-collective process and difficult to industrialize. French patent application FR-A-2 826 5 789 also discloses a laser integrated on the same substrate with a modulator, an amplifier or a filter in which both a light-emitting structure and a diffraction grating are produced. in III-V technology and are put end to end. There is nothing in silicon technology and this optical component would be associated with a silicon technology component with the drawbacks mentioned above. Also known from WO2012066200 is a laser comprising a III-V type heterostructure amplifier, arranged to generate photons, an edge waveguide optically coupled to the amplifier, and having a slot-shaped section or edge whose apex is proximal to the amplifier. The central part of the laser can be seen as two vertically coupled guides, separated by an oxide layer of a hundred nanometers: an "active" upper waveguide which constitutes the amplifying medium (or gain medium), and a transparent lower waveguide or passive photonic circuit which serves to convey light and in which all optical functions are provided. The active guide is defined in a doped III-V heterostructure in which quantum wells (or boxes) are arranged. The laser cavity is thus defined by a Bragg mirror located under the laser, and etched in the edge of the silicon guide. The edge also has the function of being an adiabatic fashion transformer. For this purpose, since its lowest section under the amplifying medium, it gradually widens to the output waveguide.
    [0004] 3025056 3 For distributed feedback lasers ("DFB" in English for "Distributed FeedBack") of the aforementioned document, the desired reflectivity is between 65 and 80%. In the present case, however, for counter-directional coupling, the reflectivity per unit length depends on the difference in effective indices between the etched and unregistered areas of the array (a deeper etched array will have a greater reflectivity per unit of length). high), but also the width of it. However, in the context of a DFB laser, the width of the grating is set by the input width of the mode transformer, i.e., the edge guide. It has been found that a minimum width of 0.7 μm is necessary to obtain the desired reflectivity, while the starting width of a mode transformer can be much lower than this value (up to 0.4 μm). In this case, it is necessary to perform the mode transformation for a higher starting width in order to obtain the required reflectivity (truncation of the mode transformer). This operation, however, will reduce the confinement of the mode in the active guide, and reduce the effectiveness of the laser. The limit edge width 20 to start the mode transformation is around 0.8 minutes. It is therefore understood that for these DFB-type lasers, it is difficult to obtain both a high reflectivity and an effective coupling between the active and passive guides.
    [0005] The present invention aims to overcome, at least partially, the aforementioned drawbacks by proposing a laser device where the reflectivity of the Bragg grating can be decoupled from the width of the edge of the ridge waveguide. For this purpose, the present invention provides a laser device 30 disposed in and / or on silicon and III-V hetero structure comprising a III-V heterostructure amplifier medium, and an optical ridge waveguide disposed in view of the amplifying medium and comprising a ribbon waveguide with a longitudinal edge, the ridge optical waveguide being disposed in silicon, characterized in that the ridge optical waveguide is oriented from whereby at least one Bragg grating is disposed on the face of the ribbon waveguide which is proximal to the amplifying medium and in that the ridge is disposed on the face of the waveguide in ribbon which is distal to the amplifying medium. In particular by decorrelating the width of the network and the width of the edge, one gains an additional degree of freedom: one can realize a network wider than the edge to improve the reflectivity, and to keep a thin edge to optimize the coupling.
    [0006] The laser device may comprise one or more of the following aspects taken alone or in combination: According to one embodiment, the laser device comprises two Bragg gratings arranged on either side with respect to the III-V heterostructure amplifying medium. . In this case, the Bragg grating which is on the side of an output network has for example a reflectivity of the order of 50% and the Bragg grating on the opposite side of the amplifying medium has for example a higher reflectivity. at 90%. According to another embodiment, the laser device comprises a Bragg grating opposite the MN / heterostructure amplifying medium. In this case, it is in particular a single Bragg network.
    [0007] In this case, the Bragg grating comprises a quarter-wave plate for single-mode operation. For this embodiment, the reflectivity of the Bragg grating is between 65% and 80%.
    [0008] According to the following aspects, valid for one or other of the embodiments: the width of the Bragg grating is greater than that of the edge, the width of the Bragg grating is substantially equal to the width of the guide of In ribbon wave, the width of the edge waveguide edge increases toward an output waveguide to form a mode transformer, the minimum edge width is between 0.411m. and 0.7pm, the maximum width of the edge is greater than 11.1m, especially 1.1pm, the height of the edge is between 100nm and 250nm, in particular 200nm, the height of the ribbon guide is between 250nm and 350 nm, in particular 300 nm, the ribbon waveguide and the longitudinal edge are each formed of crystalline silicon or one of crystalline silicon and the other of amorphous silicon, the longitudinal edge is of crystalline silicon and the ribbon waveguide 25 is formed by two layers including the one in contact with the longitudinal edge is also made of crystalline silicon and the other of which is proximal to the amorphous silicon amplifier medium.
    [0009] The invention also relates to a method for manufacturing a laser device, in particular as defined above, comprising the following steps: an edge waveguide having a waveguide in accordance with FIG. ribbon having a longitudinal edge in a silicon layer disposed above a buried insulating layer, itself disposed above a support substrate, is encapsulated by an insulating layer the edge waveguide, the whole is returned, the support substrate and the buried insulating layer are removed until a face of the ribbon waveguide is discovered, at least one Bragg grating is produced by etching in the face of the waveguide in ribbon, an insulating layer is deposited and a chemical-mechanical polishing of this layer is carried out, a heterostructure formed of III-V semiconductor material is deposited, selective etching of the heterostructure is carried out to obtain an amplifying medium. The invention also relates to a method of manufacturing a laser device, particularly as defined above, comprising the following steps: an edge waveguide is produced having a ribbon waveguide 25 having a longitudinal edge in a silicon layer disposed above a buried insulating layer, itself disposed above a support substrate, is encapsulated by an insulating layer the ridge waveguide, it returns the whole The carrier substrate and the buried insulating layer are removed until a face of the ribbon waveguide is removed, an amorphous silicon layer is deposited on the face of the ribbon waveguide, and the ribbon waveguide is removed. by etching at least one Bragg grating in the amorphous silicon layer, an insulating layer is deposited and a chemical-mechanical polishing of this layer is carried out, a heterostructure formed of semiconductor material III-V is deposited, a chem engraving selective ionic heterostructure to obtain an amplifying medium. BRIEF DESCRIPTION OF THE DRAWINGS Other advantages and features will appear on reading the description of the invention, as well as the following figures in which: FIG. 1 shows a first embodiment of a laser device according to the invention according to a schematic view in longitudinal section, - Figure 2 shows the laser device of Figure 1 in a schematic cross-sectional view along the section line II-II of Figure 1, - Figure 3A shows a schematic representation 25 In perspective of the edge waveguide of the laser device of FIG. 1, FIG. 3B shows a schematic representation in longitudinal section of the edge waveguide of the laser device of FIG. 1, FIG. A partial top view of the laser device of FIG. 1, FIGS. 5A, 6A / 6B to 14A / 14B show schematic sectional views to illustrate a method of manufacturing a laser device n the invention, the figures "A" being schematic views in longitudinal section while the figures "B" are corresponding views in cross section. FIG. 15 shows a second embodiment of a laser device according to the invention in a schematic view in longitudinal section; FIG. 16 shows the laser device of FIG. 15 in a schematic cross-sectional view along the line; FIG. 17A shows a diagrammatic perspective view of the ridge waveguide of the laser device of FIG. 15, FIG. 17B shows a schematic representation in longitudinal section of the guide of FIG. the waveform at the edge of the laser device of FIG. 15, and FIG. 18 shows a partial top view of the laser device of FIG. 15. DESCRIPTION OF EMBODIMENTS In all the figures, identical elements bear the same numbers reference. In the present description, the term "longitudinal" should be understood substantially parallel to the direction of propagation of light (see arrow Fl) and the term "transverse" should be understood substantially transversely to the direction of propagation of light.
    [0010] By convention, on an optical circuit produced in a given plane, polarization states TE (for "transverse electric" in English) and TM (for "transverse magnetic" in English) are defined such as in the TE state. the electric field is parallel to the plane of the circuit, while the magnetic field is perpendicular to the plane of the circuit, and in the TM state the magnetic field is parallel to the plane of the circuit while the electric field is perpendicular to the plane of the circuit. In fact, in the laser, it will be implicitly to consider a quasi-TE polarization state, that is to say that the electric field is very predominantly polarized in its direction TE. Thus, the structure of the laser as described will preferentially allow coupling of the TE or quasi-TE mode of the wave. Figures 1 to 4 show a first embodiment of a laser device 1 according to the invention. In this embodiment, it is a distributed feedback laser device integrated on silicon and doped III-V hetero structure. FIG. 1 is a diagrammatic view in longitudinal section, FIG. 2 a cross-sectional view along section line II-II; FIG. 3A shows a schematic perspective representation of the edge waveguide of the laser device of FIG. FIG. 1 and FIG. 4 show a partial view from above of the laser device 1. The laser device 1 comprises an optical amplifier medium 3 with a III-V heterostructure, the heterostructure being arranged to generate photons, in other words an optical wave. .
    [0011] Type III-V heterostructure means the use of materials which can be selected from the following non-exhaustive list: InP, GaAs, InGaAlAs, InGaAsP, AlGaAs, InAsP. The heterostructure of such an amplifying medium 3, also called a gain medium, may comprise a stack of various layers, such as for example a stack of 30 layers forming quantum wells sandwiched between a first doped layer 7, preferably N-doped, and a second doped, preferably P-doped, layer 9. Typically, the layer 9 will be P-doped in the 10 cm 3 and the layer 7 in the 10 cm 3, more precisely the layers 7 and 9 may they themselves be formed by epitaxy and be composed of several sub-layers, with variable doping (the doping decreases when one approaches the quantum wells) .The quantum wells are not doped. it is N-doped, may comprise a material chosen, for the most part, from InP, GaAs, InGaAsP, InGaAIAs, AIGaAs, InAsP The second doped layer 9, when it is P-doped, may comprise a material chosen from InP , GaAs, InGaAsP, InGaA In other words, the materials used for the first layer 7 and the second layer 9 may be the same, only the doping changes. Of course, the doping can be reversed, that is to say that the first doped layer 7 can be P-doped, and the second doped layer 9 can be N-doped. The stack of layers 5 can comprise quantum wells or quantum boxes allowing the recombination of holes and electrons to form photons, and thus generating the optical wave at the amplifying medium 3. The quantum elements (wells or boxes) may comprise a material such as InP, GaAs, InGaAsP, InGaAlAs, A1Ga, As, InAsP. The thickness of the hetero-structure amplifier medium 3 is typically of the order of several microns. The thickness of the quantum well stack 5 is of the order of 200-400 nm, for example 300 nm and the thickness of the layer 7 is of the order of 100-200 nm. The layer 9 may have a thickness between 1-3pm.
    [0012] 3025056 11 As shown in Figures 1 and 2, under the amplifying medium 3 is disposed an optical waveguide ridge 11 integrated or formed in a silicon on insulator layer 13 (SOI in English for "silicon on insulator" ).
    [0013] This ridge waveguide 11 is disposed opposite the amplifying medium 3 and consists of a ribbon waveguide 15 having a longitudinal edge 17 (see FIGS. 2 and 3A). The ribbon waveguide 15 and the longitudinal edge 17 are for example formed of crystalline silicon both.
    [0014] However, other options are possible. In particular, a first case is noted in which the ribbon waveguide 15 is of crystalline silicon and the longitudinal edge 17 is of amorphous silicon. According to a second particularly interesting case, the longitudinal edge 17 is of crystalline silicon and the ribbon waveguide 15 is formed by two layers, one of which is in contact with the longitudinal ridge 17 also of crystalline silicon and the other of which proximal to the amplifying medium 3 of amorphous silicon, that is to say the layer which is closer to the amplifying medium 3. The longitudinal edge 17 and the crystalline silicon layer of the ribbon waveguide 15 are in the layer 13 of silicon on insulator (SOI) while the amorphous silicon layer is in an insulating layer above the silicon on insulator layer. This arrangement makes it possible to maintain maximum compatibility with existing silicon front-face photonic processes and devices and to minimize the thermal budget applied to the amorphous silicon layer seen in section (Fig. 2), the ribbon waveguide 15 and the longitudinal edge 17 are both rectangular, but their width may vary in the direction of propagation of the light (example in Fig. 4). The ridge optical waveguide 11 is oriented such that a Bragg grating 19 is formed on the face 21 of the ribbon waveguide 3025056 12 which is proximal to the optical amplifier medium 3. By " proximal "here means that the Bragg grating 19 is made on the face 21 which is closest to the amplifying medium 3, which allows a more effective optical coupling between the Bragg grating 19 on the one hand and the medium amplifier 3 on the other hand. The reflectivity of the Bragg grating can be between 65% and 80%. For a DFB network 500om / 1mm long, a counter-reaction coupling coefficient of between 10 and 30 cm -1 is required. For a bonding thickness of 100 nm, the network must be etched at least 100 nm in the ribbon, and the width of the edge (L) may be less than 500 nm. The longitudinal edge 17 disposed under the ribbon waveguide 15 (as shown in FIGS. 1 to 4) is distal to the amplifying medium 3. By "distal" is meant here that the ridge 17 is disposed on the face 23 opposite the face 21: the face 23 is furthest from the amplifying medium 3. This is also clearly visible in FIG. 3A showing the edge waveguide 11 in an isolated manner. As can be seen in FIG. 3A, the width LB of the Bragg grating 19 is greater than the width 1, of the edge. In particular, the width LB of the Bragg grating 19 is equal to the width of the ribbon waveguide 15. Thanks to these arrangements, the coupling between the Bragg grating 19 and the amplifying medium 3 is improved.
    [0015] In addition, the width LB of the Bragg grating 19 can be selected independently of the width 1, of the edge and without influence on the reflectivity of the Bragg grating 19. FIG. 3B shows a schematic view in longitudinal section (FIG. in the direction of propagation of light) of the ridge guide 11.
    [0016] The Bragg grating 19 has a quarter wave plate 24 located at the center of the grating 19 to provide monomode operation of the laser device 1. The height hA of the edge is between 100 nm and 250 nm, in particular 200 nm. The height hR of the ribbon guide 15 is between 250 nm and 350 nm, in particular 300 nm. Referring now to Figure 4 showing a partial top view of the laser device of Figure 1.
    [0017] In particular, in the form of a dotted line, the shape of the edge 17 widening towards an exit waveguide 25 to form a mode transformer is distinguished. The minimum width 1. of the edge 17 is between 0.4pm and 0.7pm.
    [0018] The maximum width lmax of the ridge 17 is greater than 11.1m, especially 1.1pm, and can go up to 31.1m. Referring now to FIGS. 1 and 4. As seen in these figures, the laser device 1 further comprises an output network 27. This coupling network 27 with an optical fiber 29 may comprise a trench network partially realized in the waveguide 11, for example by etching the latter. Preferably, the trenches are substantially perpendicular to the longitudinal axis of the waveguide 11, and are formed on a lower face of the waveguide 11, the lower face 31 being in FIG. 11 wave downwardly and substantially parallel to the plane of the waveguide 11. For a waveguide 11 according to the aforementioned dimensions, the trenches may have a depth of 125nm, or more if necessary. The network can, for example, be defined using a hard mask, then a directional engraving.
    [0019] On the other hand, eutectic deposits 33 and 35 respectively deposited on the first doped layer 7 and the second doped layer 9 make it possible to take metal contacts on the layers 7 and 9. With reference to FIGS. 5, 6A / 6B to 14A 14 B will now describe a method of manufacturing a laser device 1 according to the invention. FIGS. 5A, 6A / 6B to 14A / 14B show diagrammatic sectional views, "A" figures being diagrammatic views in longitudinal section while "B" figures are corresponding cross-sectional views. As can be seen in FIG. 5A, the reference SB denotes a Silicon-on-Insulator (SOI) substrate of a wafer or wafer. This "SOI" substrate comprises a silicon film or film 100 having for example a thickness of between 200 nm and 11 μm typically of 500 nm and disposed above a buried insulating layer 102, commonly known as BOX (for "Buried OXide"). in English). This buried insulating layer 102 is itself disposed above a support substrate 104.
    [0020] In a first step visible in FIGS. 6A and 6B, the silicon layer 100 is formed, for example by etching, in order to obtain a ridge waveguide 11. If the laser device 1 is part of a set More importantly, other components (modulators, photodetectors, etc.) can be made in this step on the upper face 106 of the BOX layer 102. As can be seen in FIGS. 7A and 7B, an insulating layer 108 for example SiO 2 is deposited to encapsulate the ridge waveguide 11. Then a support substrate 110 is glued to the upper face 112 of the insulating layer 108.
    [0021] In the next step (FIGS. 8A and 8B), the assembly is turned over so that the edge 17 is directed downwards of the figure and the ribbon guide 15 is on top. Subsequently, the carrier substrate layer 104 is removed, for example, by abrasion or chemical-mechanical polishing ("grinding"). The BOX layer 102 (which can serve as a polishing stop layer) is then at the top completely uncovered (see FIGS. 9A and 9B). The BOX 102 layer is then removed by selective wet chemistry or by dry etching, for example reactive ion etching ("RIE") or inductively coupled plasma etching ("ICP" for "reactive ion etching"). inductively coupled plasma "in English) so as to discover the face 21 of the ribbon waveguide 15 which will be turned, as will be seen, to the amplifying medium 3 (see FIGS. 10A and 10B). In the next step (see FIGS. 11A and 11B) showing a first variant, the Bragg grating 19 is etched (or structured) in the face 21 of the silicon layer 100 thus exposed, preferably over the entire width of the guide. ribbon 15.
    [0022] According to a second variant not shown, a layer of additional amorphous silicon is deposited on the portion of the ribbon waveguide and the Bragg grating is etched (or structured) in this additional amorphous silicon layer. In this case, the longitudinal edge 17 is therefore made of crystalline silicon and the ribbon waveguide 15 is formed by two layers, one of which is in contact with the longitudinal edge 17, also of crystalline silicon, the other of which is proximal to the amplifier medium 3 in amorphous silicon. The longitudinal edge 17 and the crystalline silicon layer of the ribbon waveguide 15 are in the silicon-on-insulator (SOI) layer 13.
    [0023] This makes it possible to maintain maximum compatibility with existing silicon photonic processes and devices (for example modulators or photodetectors) and to minimize the thermal budget applied to the amorphous silicon layer.
    [0024] Then, in the case of the first as well as the second variant, an additional layer 116 of insulator, for example SiO 2, of a hundred nm on the entire face thus discovered is deposited (see FIGS. 12A and 12B). ). This additional layer 116 can then be subjected to mechanical-chemical polishing.
    [0025] Then, for example, a III-V plate 111 having on one face a III-V heterostructure is used. Then, the wafer 118 is bonded, for example by molecular bonding to the additional layer 116 (see FIGS. 13A and 13B), so that the heterostructure is in contact with the structure previously produced in the silicon.
    [0026] Finally, selective etching of the substrate of the bonded wafer 118 is carried out so as to obtain the amplifying medium 3 (see FIGS. 14A and 14B). For the sake of simplification, the layers 9, 5 and 7 of the medium 3 have not been represented. Eutectic deposits, for example based on gold, can then be carried out so as to be able to take metal contacts on the etched layers 120 and 122. Then, the assembly can be encapsulated by deposition of another insulating layer and can be made in conventional manner metal contacts. Figures 15 to 18 show a second embodiment of a laser device 1 according to the invention. In this embodiment, it is a distributed Bragg grating laser device. FIGS. 15 to 18 are views similar to those of FIGS. 1 to 4 and the laser device in these FIGS. 15 to 18 is distinguished by the fact that it comprises two Bragg gratings 19a and 19b arranged on either side with respect to the III-V heterostructure amplifier medium 3. The networks 19a and 19b are thus made on the face 21 which is proximal to the amplifying medium 3, but outside the cavity of this amplifying medium 3 and at a point where the edge 17 is the widest ( 1max).
    [0027] As seen in FIGS. 15, 17A, 17B and 18, the network 19a which is on the output network side 27 is shorter and has a lower reflectivity, of the order of 50%, than the network. 19b on the opposite side of the amplifying medium 3 which may have a reflectivity greater than 90%, or even approaching 100%.
    [0028] The manufacturing method described in connection with FIGS. 5, 6A / 6B to 14A / 14B applies analogously for the manufacture of a laser device according to this embodiment of a distributed Bragg grating laser device. It can therefore be seen that the laser device 1 according to the invention can be easily made with a reduced number of manufacturing steps. By the provisions of the ridge waveguide 11, particularly in the configuration of FIGS. 1 to 4, it has been observed that the coupling coefficient values of the contraction reaction of the Bragg grating 19 on the proximal face of the ribbon guide 19 are higher than in the state of the art, especially with respect to a configuration where the Bragg grating is structured on the edge. Moreover, the inventors have also been able to observe a decrease in the influence of the engraving depth on the value of the coupling coefficient of the feedback, thus increasing the robustness of the manufacturing process.
    权利要求:
    Claims (17)
    [0001]
    REVENDICATIONS1. Laser device (1) disposed in and / or on silicon and III-V hetero structure comprising an III-V heterostructure amplifier medium (3), and a ridge optical waveguide (11) disposed opposite the medium amplifier (3) and comprising a ribbon waveguide (15) having a longitudinal edge (17), the ridge optical waveguide (11) being disposed in silicon, characterized in that the waveguide an edge optical wave (11) is oriented such that at least one Bragg grating (19, 19a, 19b) is disposed on the face (21) of the ribbon waveguide (15) which is proximal relative to the amplifying medium (3) and in that the edge (17) is disposed on the face (23) of the ribbon waveguide (15) which is distal to the amplifying medium (3).
    [0002]
    2. Laser device according to claim 1, characterized in that it comprises two Bragg gratings (19a, 19b) arranged on either side with respect to the III-V heterostructure amplifying medium (3).
    [0003]
    3. Laser device according to claim 2, characterized in that the Bragg grating (19a) which is on the side of an output network (27) has a reflectivity of the order of 50% and that the Bragg grating (19b) on the opposite side of the amplifying medium (3) has a reflectivity greater than 90%. 3025056 19
    [0004]
    4. Laser device according to claim 1, characterized in that it comprises a Bragg grating (19) opposite the III-V heterostructure amplifying medium (3). 5
    [0005]
    Laser device according to claim 4, characterized in that the Bragg grating (19) comprises a quarter-wave plate (24) for single-mode operation.
    [0006]
    6. Laser device according to any one of claims 4 to 5, characterized in that the reflectivity of the Bragg grating (19) is between 65% and 80%.
    [0007]
    Laser device according to one of Claims 1 to 6, characterized in that the width of the Bragg grating (19) is greater than that of the ridge (17).
    [0008]
    8. Laser device according to any one of claims 1 to 7, characterized in that the width of the Bragg grating (19) is substantially equal to the width of the ribbon waveguide (15). 20
    [0009]
    Laser device according to one of claims 1 to 8, characterized in that the width of the ridge (17) of the ridge waveguide (11) increases towards a waveguide (25). ) to form a mode transformer. 25
    [0010]
    10. Laser device according to claim 9, characterized in that the minimum width of the edge (17) is between 0.411m and 0.7pm. 3025056 20
    [0011]
    11. Laser device according to claim 9 or 10, characterized in that the maximum width of the edge (17) is greater than 11.1m, in particular 1.1pm. 5
    [0012]
    12. Laser device according to any one of claims 1 to 11, characterized in that the height of the edge (17) is between 100nm and 250nm, in particular 200nm.
    [0013]
    13. Laser device according to any one of claims 1 to 12, characterized in that the height of the ribbon guide (15) is between 250nm and 350nm, in particular 300nm.
    [0014]
    14. Laser device according to any one of claims 1 to 13, characterized in that the ribbon waveguide (15) and the longitudinal ridge (17) are each formed of crystalline silicon or one of crystalline silicon. and the other amorphous silicon.
    [0015]
    15. Laser device according to any one of claims 1 to 13, characterized in that the longitudinal edge (17) is of crystalline silicon and the ribbon waveguide (15) is formed by two layers, one of which is contact with the longitudinal edge (17) also crystalline silicon and the other proximal to the amplifying medium (3) amorphous silicon. 25
    [0016]
    A method of manufacturing a laser device comprising the steps of: providing an edge waveguide (11) having a ribbon waveguide having a longitudinal edge in a silicon layer (100) disposed thereon above a buried insulating layer (102), itself arranged above a support substrate (104), the edge waveguide (11) is encapsulated by an insulating layer (110). , the assembly is returned, the support substrate (104) and the buried insulating layer (102) are removed until a face of the ribbon waveguide (15) is detected. At least one Bragg grating (19) in the face (21) of the ribbon waveguide (15), an insulating layer (116) is deposited and a mechanical-chemical polishing of this layer is carried out; a heterostructure is deposited (118). formed of III-V semiconductor material, selective etching of the heterostructure (118) is performed to obtain an ampli indicator (3). 15
    [0017]
    A method of manufacturing a laser device comprising the steps of: providing an edge waveguide (11) having a ribbon waveguide having a longitudinal edge in a silicon layer (100) disposed above a buried insulating layer (102), itself disposed above a support substrate (104), the edge waveguide (11) is encapsulated by an insulating layer (110), The whole is returned, the support substrate (104) and the buried insulating layer (102) are removed until a face of the ribbon waveguide (15) is discovered, an amorphous silicon layer is deposited on the face of the ribbon waveguide (15) 3025056 22 is made by etching at least one Bragg grating (19) in the amorphous silicon layer, an insulating layer (116) is deposited and a mechanical polishing is carried out -chemical of this layer, 5 is deposited a heterostructure (118) formed of semiconductor material III-V, is made a grav selective chemical ure of the heterostructure (118) to obtain an amplifying medium (3). 10
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    EP2988378B1|2017-04-26|
    US20180278021A1|2018-09-27|
    EP2988378B8|2017-08-02|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1457937A|FR3025056B1|2014-08-22|2014-08-22|LASER DEVICE AND METHOD FOR MANUFACTURING SUCH A LASER DEVICE|FR1457937A| FR3025056B1|2014-08-22|2014-08-22|LASER DEVICE AND METHOD FOR MANUFACTURING SUCH A LASER DEVICE|
    US14/827,429| US10014660B2|2014-08-22|2015-08-17|Laser device and process for fabricating such a laser device|
    EP15181819.2A| EP2988378B8|2014-08-22|2015-08-20|Laser device and method for manufacturing such a laser device|
    JP2015163354A| JP6650699B2|2014-08-22|2015-08-21|Laser device and method of manufacturing laser device|
    US15/992,573| US10511147B2|2014-08-22|2018-05-30|Laser device and process for fabricating such a laser device|
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